Paper title: AN IMPROVEMENT OF ULTRA LOW POWER, VOLTAGE AND TEMPERATURE INSENSITIVE CMOS VOLTAGE REFERENCE
Author(s): WORAWAT SA-NGIAMVIBOOL, WACHIRAPUNYA PUNYAWONG,
Abstract: This paper presents the design of a CMOS voltage reference circuit. In the past, the design of a CMOS voltage reference circuit
consisted of a lot of active and passive devices or required an external startup circuit. Therefore, this research presents the
design of a voltage reference circuit using all CMOS without parasitic bipolar junction transistors (BJT) and passive devices,
which cause loss of power and consume a large chip area. It can be operated without external startup circuit. The result of
PSPICE (personal simulation program with IC emphasis) simulation program has been verified that the circuit can operate with
stability. The supply voltage is only 1.8 V, reference voltage levels of about 259 ± 2.5 mV, the standard temperature coefficient of
95.15 ppm/ºC, ranges from –20 to 100 ºC and a low power dissipation of 2.93 μW.
Keywords: CMOS, Voltage reference, Subthreshold, Temperature compensation, Low voltage, Low power Year: 2017 | Tome: 62 | Issue: 2 | Pp.: 175-178
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