Paper title: MODELLING THE ELECTROSTATIC DISCHARGE PHENOMENA OF A CMOS ADDER STRUCTURE
Author(s): ANA-MARIA NICUŢĂ,
Abstract: This paper deals with diagnosing the failure effects in applying electrostatic charges on
a model based on MOSFET transistors. In this regard, the work highlights the
performance of a One-bit full adder CMOS structure by applying high stresses on one
of its inputs. The testing results are carried out using the CADENCE IC 5.3 software
package by considering the alternative electrostatic discharge implementation of the
transmission line pulse method. The functionality of the structure was improved by
adding several electronic components with electrostatic discharge protective
properties
Keywords: Electrostatic discharge, One-bit full adder, Transmission line pulse
method, Circuit design Year: 2013 | Tome: 58 | Issue: 3 | Pp.: 295-303
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