An enhanced charge pump circuit utilizing charge-transfer-switch (CTS) to direct charge flow with improved voltage pumping gain is proposed in this paper. The diodeconfigured output stage limitation is managed through the pumping of output stage by the clock of improved charge pump circuit. Using Mentor Graphics, the proposed charge pump circuit is designed in 0.18 μm CMOS process. It is able to pump an input voltage of 1.8 V to a measured output of 5.95 V through 20MHz clock signal with each pumping capacitor of 0.1 pF and smoothing capacitor of 0.1 pF at the output. From the simulation result, it is evident that the proposed charged pump circuit offers higher pumping gain compared with the existing charge pump circuit. Besides, using in Non- Volatile Memory (NVM), proposed design can be used in low voltage memory circuits.

Keywords: Charge pump, CMOS, EEPROM, NVM