In the paper is presented a comparison between two five level converters in view of total power losses in the semiconductor devices and the parameters of the output voltage. The two structures use the flying capacitor concept and are derivative from three level topologies. These structures are presented and discussed in order to describe how the five level versions were obtained and why. Simulation and experimental results are presented in order to verify the theoretical studies made.

Keywords: Multilevel structures, Power losses, Pulse width modulation