Paper title: CMOS DIFFERENTIAL STRUCTURE WITH IMPROVED LINEARITY AND INCREASED FREQUENCY RESPONSE
Author(s): ANCA MANOLESCU, COSMIN POPA,
Abstract: An original differential structure using exclusively MOS devices working in the
saturation region will be presented. Having the great advantage of an excellent linearity,
obtained by a proper biasing of the differential core (using original translation and
arithmetical mean blocks), the proposed circuit is designed for low-voltage low-power
operation. The simulated linearity is obtained for an extended range of the differential
input voltage and in the worst case of considering second-order effects that affect MOS
transistors operation. The frequency response of the new differential structure is
strongly increased by operating all MOS devices in the saturation region. The circuit is
implemented in 0.35 µm CMOS technology, SPICE simulations confirming the
theoretical estimated results.
Keywords: Linearity, Differential structure, CMOS circuits Year: 2010 | Tome: 55 | Issue: 2 | Pp.: 191-200
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